Ph.D. Qualifying October 27, 2025, 11:00 am - 1:00 pm ENGR conference room C101B N/A - qualifying exam
Abstract: qualifying exam
Adviser: Biswajit Ray Co-Adviser: N/A Non-ECE Member: Alexander Brandl, Environmental and Radiological Health Sciences Member 3: Sudeep Pasricha, Electrical and Computer Engineering Addional Members: Reed Hollinger, Electrical and Computer Engineering
Publications: • [J1] M. A. Kumar, T. Boykin, L. R. Cao and Biswajit Ray, “State Dependent Threshold Voltage Shift in Irradiated 64-Layer 3D NAND Memories" in IEEE Transactions on Nuclear Science..
• [J2] M. A. Kumar and M. Buddhanoy and Biswajit Ray, “A Comparative Analysis of Radiation Tolerance in Charge-Trap and Floating-Gate 3-D NAND Memory Technologies" in IEEE Transactions on Nuclear Science.
• [J3] M. A. Kumar, M. Raquibuzzaman, M. Buddhanoy, T. Boykin and B. Ray,“Origin of post-irradiation Vth-shift variability in 3D-NAND memory array," in IEEE Transactions on Nuclear Science.
• [C1] M. A. Kumar and B. Ray, "SILC in 3-D NAND: Characterization, Analysis and Mitigation," 2025 IEEE International Integrated Reliability Workshop (IIRW). [Accepted]
• [C2] M. A. Kumar et al., "Radiation Induced Leakage Current in 3-D NAND Technology," 2025 RADiation and its Effects on Components and Systems Conference (RADECS).[Accepted]
• [C3] M. A. Kumar and B. Ray, "Cross-Temperature Reliability of 3D NAND: Cell-to-Cell Variability Analysis and Countermeasure," 2024 IEEE International Reliability Physics Symposium (IRPS).
• [C4] B. Ray, M. Buddhanoy and M. A. Kumar, "Towards Improving Ionizing Radiation Tolerance of 3-D NAND Flash Memory," 2023 IEEE International Memory Workshop (IMW).
• [C5] M. A. Kumar et al., "Total-Ionizing-Dose Effects on Threshold Voltage Distribution of 64-Layer 3D NAND Memories," 2022 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with 2022 NSREC).
