Give


Graduate Exam Abstract


Michael Shover

Ph.D. Final

March 23, 2017, 12:00 pm - 2:00 pm

Mechanical Engineering Conference Room

Reliability of RF Amplifying Circuits


Abstract: Wide bandgap semiconductors such as Gallium Nitride (GaN) have many advantages over their Si counterparts, such as a higher energy bandgap, critical electric field, and saturated electron drift velocity. These parameters translate into devices which operate at higher frequency, voltage, and efficiency than comparable Si devices, and have been utilized in varying degrees for power amplification purposes at >1 MHz for years. Fortunately within the past five years, devices have become commercially available with attractive key specifications: breakdown voltages of over 600 V, realized in cost effective chip scale packages, and with inherently low parasitic capacitances and inductances. The results of three interconnected experiments using such devices are presented: (1) feasibility of high power RF amplifiers, (2) thermal characterization, and (3) long term reliability.

Adviser: George Collins
Co-Adviser: N/A
Non-ECE Member: Chris Ackerson, Chemistry
Member 3: Tom Chen, ECE
Addional Members: V. Chandrasekar, ECE

Publications:
N/A


Program of Study:
ECE505
ECE507
ECE548
ECE673
ENGR692
ECE799
N/A
N/A