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(For the period 1967-2000, over 110 journal papers and book chapters; over 130 conference presentations)
[PDF] J. M. Fastenau and G. Y. Robinson, "Low
Resistance Visible Wavelength Distributed
Bragg Reflectors using Small Band Offset
Heterojunctions", Appl. Phys. Lett.
74 (25) 3758 (21 June 1999).
[PDF] T. J. Vogt, P. Thiagarajan, J. M. Fastenau, and G. Y. Robinson, "Optical Modulators at 604 nm using Strain-Balanced InGaP/InGaP MQWs", Electronics Letters 34 (7), 696-697 (2 April 1998).
[PDF] P Thiagarajan, G.E. Giudice, H. Temkin, and G.Y. Robinson, "Low Threshold Current 1.3-mm InAsP/InGaAsP Lasers by Gas-Source Molecular Beam Epitaxy", Electronics Letters 32 (12), 1103-1105 (6 June 1996).
[PDF] Y.G. Wey, K. S. Giboney, J. E. Bowers, M.J.W. Rodwell, P. Silvestre, P. Thiagarajan, and G.Y. Robinson, "108 GHz GaInAs/InP p-i-n Photodiodes with Integrated Bias Tees and Matched Resistors", IEEE Photonics Technol. Letters 5 (11), 1310 (November 1993).
[PDF] X. An, K.M. Geib, M.J. Hafich, F.R. Beyette Jr., S.A. Feld, G.Y. Robinson, and C.W. Wilmsen, "Highly Compact Integrated Optical Set-Reset Memory Pixels for Parallel Processing Arrays", IEEE Photonics Tech. Lett. 5 (6), 545 (May 1993).
[PDF] J. Chen, J.R. Sites, I.L. Spain, M.J. Hafich, and G.Y. Robinson, "The Band Offset of GaAs/InGaP Measured Under Hydrostatic Pressure", Appl. Phys. Letters 58 (7), 744 (18 February 1991).
[PDF] M. A. Haase, M. J. Hafich, and G.Y. Robinson, "Internal Photoemission and Energy Band Offsets in GaAs/GaInP pIN Heterojunctions", Appl. Phys. Letters 58 (6), 616 (11 February 1991).
[PDF] Y.G. Wey, D.L. Crawford, K. Giboney, J.E. Bowers, M.J. Rodwell, P. Silvestre, M.J. Hafich, and G.Y. Robinson, "Ultrafast Graded Double Heterostructure GaInAs/InP p-i-n Photodiode", Appl. Phys. Lett. 58 (19), 2156 (13 May 1991).
[PDF] H.Y. Lee, M.D. Crook, M.J. Hafich, J.H. Quigley, G.Y. Robinson, D. Li, and N. Otsuka, "InGaP/GaAs Superlattices Grown by Gas-Source Molecular Beam Epitaxy", Appl. Phys. Letts. 55 (22), 2322 (27 Nov. 1989).
[PDF] M.J. Hafich, J.H. Quigley, R.E. Owens, G.Y. Robinson, D. Li, and N. Otsuka, "High Quality Quantum Wells of InGaP/GaAs Grown by Molecular Beam Epitaxy", Appl. Phys. Letts. 54 (26), 2686 (26 June 1989).
[PDF] T.E. Crumbaker, H.Y. Lee, M.J. Hafich, and G.Y. Robinson, "Growth of InP on Si Substrates by Molecular Beam Epitaxy", Appl. Phys. Letts. 54 (2), 140 (9 Jan 1989).
A. J. Valois and G. Y. Robinson, "Characterization of Deep Levels in Modulation-Doped AlGaAs/GaAs FETs," IEEE Electron Device Lett., EDL-4, 360, (1983).
H. Grinolds and G. Y. Robinson, "Pd/Ge Contacts to n-type GaAs," Solid-State Electronics, 23, 973, (1980).
[PDF] G. Y. Robinson, "Metallurgical and Electrical Properties of Alloyed Ni/Au-Ge Films on n-type GaAs," Solid-State Electronics, 18, 331, (1975).
[PDF] G. Y. Robinson, "Stroboscopic Scanning Electron Microscopy at Gigahertz Frequencies," Rev. Sci. Instr., 42, 251, (1971).
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