Gary Robinson's research interest is semiconductor materials and devices. From 1970 to 1984 he was on the Electrical Engineering faculty of the University of Minnesota, Minneapolis where he conducted research on electrical and metallurgical characterization of metal-semiconductor contacts on Si and the III-V semiconductors. In 1984, he started a new research group at Colorado State University, for the study of the growth of III-V heterostructures by gas-source molecular beam epitaxy. His research group has produced a range of novel quantum-well semiconductor materials, contributing to the development of high-speed photodetectors and low-current infrared lasers. At Colorado State he has taught courses in circuits, electronics, semiconductors, optoelectronic and microelectronic devices, integrated circuit design, and electromechanical devices. Professor Robinson has held visiting research positions with Hewlett-Packard Laboratories, the Perkin-Elmer Corporation, and the Naval Research Laboratory.
Professor Robinson is a Fellow of the IEEE and a member of the AVS, has taught short courses in the USA and Europe, and has served on organizing committees for numerous research conferences on the III--V semiconductors.