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Dr. Wilmsen's Publications


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JOURNAL PUBLICATIONS AND BOOK CHAPTERS


1. Extended Huckel Calculations of Relative Chemisorption Energies, J. C. Robertson and C.W. Wilmsen, J. Vac. Sci. Technol. vol.8, no. 53 (1971).

2. Geometrical Dependence of the Maximum DC Josephson Current, D. L. Stuehm and C. W. Wilmsen, J. Appl. Phys. 42, 869 (1971).

3. Buckling of Thermally-Grown SiO2 Thin Films, C. W. Wilmsen, E. G. Thompson, and G.H. Meissner, IEEE Trans. Electron Devices, ED-19, 122 (1972).

4. Preferential Orientation of CO Absorption of Ni as Determined by Extended Huckel Calculations, J. C. Robertson and C. W. Wilmsen, J. Vac. Sci. Technol. 9, 901 (1972).

5. A Three Josephson Junction Interferometer, D. L. Stuehm and C. W. Wilmsen, Appl. Phys. Letters 20, 456 (1972).

6. Critical Current Periodicity of Josephson Junction Interferometers, D. L. Stuehm and C. W. Wilmsen, J. Appl. Phys. 43, 3588 (1972).

7. Josephson Junction Interference Gratings, D. L. Stuehm and C. W. Wilmsen, J. Appl. Phys. 44, 2881 (1973).

8. Shape of Cathode dark Space of a Sputtering Plasma Determined from Probe Measurements, W. R. Larsen, P. W. Chan, and C. W. Wilmsen, J. Appl.Phys. 44, 2153 (1973).

9. Diffraction Patterns and Vortex Structure of Asymmetrical and Cross Josephson Junctions, D. L. Stuehm and C. W. Wilmsen, J. Appl. Phys. 45, 429 (1974).

10. Conductance Switching of Thermally Grown SiO2 , M. C. Allender and C. W. Wilmsen, J. Appl. Phys. 45, 1912 (1974).

11. Electrical Conduction through Thermal and Anodic Oxides of InSb, C. W. Wilmsen, G. C. Vasbinder and Y. K. Chan, J. Vac Sci. Technol. 12, 56 (1975).

12. Vapor Technique for the Formation of Organic Monolayer Tunnel Junction, C. W. Wilmsen and J. C. Robertson, Thin Solid Films 29, 185 (1975).

13. The MOS-InP Interface, C. W. Wilmsen, Critical Reviews in Solid State Sciences 5, 313 (1975).

14. Correlation Between the Composition Profile and Electrical Conductivity of the Thermal and Anodic Oxides of InSb, C. W. Wilmsen, J. Vac. Sci. Technol. 13, 64 (1976).

15. Oxide Layers on III-V Compound Semiconductors, C. W. Wilmsen, Thin Solid Films 39 105 (1976).

16. Auger Analysis of the Anodic Oxide/InP Interface, C. W. Wilmsen and R. W. Kee, J. Vac. Sci. Technol. 14, 953 (1977).

17. MOS Processing for III-V Compound Semiconductors: Overview and Bibliography, C. W. Wilmsen and S. Szpak, Thin Solid Films 46 17, (1977).

18. Single and Double Layer Insulator MOS Capacitors on InAs, C. W. Wilmsen, L. G. Meiners, and D. A. Collins, Thin Solid Films 46 331 (1977).

19. Improvement of Grown Oxides for Surface Protection, R. W. Kee and C. W. Wilmsen, Thin Solid Films 51 93 (1978).

20. Analysis of the Oxide/Semiconductor Interface using Auger and ESCA as Applied to InP and GaAs, C. W. Wilmsen and R. W. Kee, J. Vac. Sci. Technol. 15, 1513 (1978).

21. Interface Characteristics of Thermal SiO2 on SiC, R. W. Kee, K. M. Geib, C. W. Wilmsen and D. K. Ferry, J. Vac. Sci. Technol. 15, 1520 (1978).

22. Auger Analysis of Ultrathin SiO2 Layers on Silicon, J. F. Wager and C. W. Wilmsen, J. Appl. Phys. 50, 874 (1979).

23. Auger Analysis of the SiO2/Si Interface for Ultrathin Oxides, J. F. Wager and C. W. Wilmsen, Proceedings of the International Topical Conference on the Physics of SiO2 and its Interfaces, S. T. Pantelides, editor.

24. Detection of SiO2 at the Indium Tin Oxide/Si Solar Cell Interface, J. F. Wager and C. W. Wilmsen, J. Appl. Phys. 50, 4172, (1979).

25. Thermal Degradation of ITO/P Silicon Solar Cells, S. M. Goodnick, J. F. Wager and C. W. Wilmsen, J. Appl. Phys. 51, 527 (1980).

26. Initial Oxidation and Oxide/Semiconductor Interface Formation on GaAs, C. W. Wilmsen, R. W. Kee, K. M. Geib, J. Vac. Sci. Technol. 16, 1434 (1979).

27. The Operation of the Semiconductor-Insulator-Semiconductor Solar Cell: Experiment, J. Shewchun, J. Dubow, C. W. Wilmsen, R. Singh, D. Burk, and J. F. Wager, J. Appl. Phys. 50, 2832 (1979).

28. Deposited Insulator Layer/GaAs and InP Interface Formation, R. W. Kee, J. F. Wager, J. Stannard, and L. Messick, 6th Int. Vacuum Metallurgy Conf. on Special Melting and Metallurgical Coatings, San Diego, California, April (1979), Thin Solid Films 64, 49 (1979).

29. CVD SiO2/InP Interface, C. W. Wilmsen, J. F. Wager, and J. Stannard, Insulating Films and Semiconductors Conference, Durham, U.K., July, 1979. Inst. Phys. Conf. Ser. No. 50 - Chapter 4, 51, 812 (1980).

30. Thermal Oxidation of InP, J. F. Wager and C. W. Wilmsen, J. Appl. Phys. 51, 812 (1980).

31. Fabrication and Characterization of Indium Tin Oxide (ITO)/Polycrystalline Silicon Solar Cells, G. Cheek, N. Inoue, S. Goodnick, A. Genis, C. W. Wilmsen, J. DuBow, Appl. Phys. Lett. 33, 643 (1978).

32. Anodic Oxide/GaAs and InP Interface Formation, K. M. Geib and C. W. Wilmsen, J. Vac. Sci. Technol. 17, 957 (1980).

33. SiO2/InP Interface Formation: Thermodynamic Considerations, J. F. Wager and C. W. Wilmsen, J. Vac. Sci. Technol. 17, 800 (1980).

34. Thermal Oxidation of InAs, D. H. Laughlin and C. W. Wilmsen, Thin Solid Films 70, 325 (1980).

35. The Effects of Intragrain Defects on the Local Photoresponse of Polysilicon Solar Cells, N. Inoue, C. W. Wilmsen and K. A. Jones, Solar Cells 233 (1980).

36. Inversion Layer Transport and Properties of Oxides on InAs, D. A. Baglee, D. K. Ferry, C. W. Wilmsen and H. H. Wieder, J. Vac. Sci. Technol. 17, 1032 (1980).

37. Effects of a thin SiO2 and the Formation of Metal-Silicon Contacts, S. M. Goodnick, M. Fathipour, D. L. Ellsworth, and C. W. Wilmsen, J. Vac. Sci. Technol. 949 (1981).

38. An Improved Anodic Oxide Insulator for InP MISFETs, D. H. Laughlin and C. W. Wilmsen, Appl. Phys. Lett. 915 (1980).

39. Anodic Oxide Insulators on InP and InAs, D. A. Baglee, D. H. Laughlin, C. W. Wilmsen and D. K. Ferry, The Physics of MOS Insulators, ed. by G. Lucovsky, S. T. Patelides and F. L. Galeener, Pergamon Press (1980).

40. Initial Oxidation of Ion Sputtered Silicon, D. L. Ellsworth and C. W. Wilmsen, The Physics of MOS Insulator, ed. by G. Lucovsky, S. T. Pantelides and F. L. Galeener, Pergamon Press (1980).

41. Inversion Layer Transport and Insulator Properties of Indium Based III-Vs, D. A. Baglee, D. H. Laughlin, B. T. Moore, B. L. Eastep, D. K. Ferry, and C. W. Wilmsen, Inst. Phys. Conf. Ser. #56, (1980).

42. Composition and Thermal Stability of Thin Native Oxides on InP, J. F. Wager, D. L. Ellsworth, S. M. Goodnick and C. W. Wilmsen, J. Vac. Sci. Technol. 19, 487 (1981).

43. Oxygen Adsorption on the Disordered Silicon Surface, D. L. Ellsworth and C. W. Wilmsen, J. Vac. Sci. Technol. 19, 513 (1981).

44.[PDF] The Chemical Composition and Formation of Thermal and Anodic Oxides/III-V Compound Semiconductor Interfaces, A Critical Review, C. W.Wilmsen, J. Vac. Sci. Technol. 19, 279 (1981).

45. Initial Stages of Anodic Oxidation, W. Makky, F. Cabrera, K. M. Geib and C. W. Wilmsen, J. Vac. Sci. Technol. 21, 417 (1982).

46. Surface Roughness Induced Scattering and Band Tailing, S. M. Goodnick, R. G. Gann, D. K. Ferry, C. W. Wilmsen and O. L. Krivanek, Sur. Sci. 114, 238 (1982).

47. The Plasma-Enhanced Chemical Vapor Deposited SiO2/InP Interface, J. F. Wager and C. W. Wilmsen, J. Appl. Phys. 53, 5789 (1982).

48. Oxidation of InP in a Plasma Enhanced CVD Reactor, J. F. Wager, W. H. Makky, C. W. Wilmsen and L. G. Meiners, Thin Solid Films 95, 343 (1982).

49. Island Stage of InP Anodization, W. H. Makky and C. W. Wilmsen, J. Electrochem. Soc. 130, 659 (1983).

50. High Temperature Annealing of InP Anodic Oxides, M. Fathipour, W. H. Makky, J. McLaren, K. M. Geib and C. W. Wilmsen, J. Vac. Sci. Technol. A1, 662 (1983).

51. Estimation of the Bandgap of InPO4, J. F. Wager, C. W. Wilmsen, L. L. Kazmerski, Appl. Phys. Lett. 42, 589 (1983).

52. Native Oxide Formation and Electrical Instabilities at the Insulator/InP Interface, J. F. Wager, K. M. Geib, C. W. Wilmsen and L. L. Kazmerski, J. Vac. Sci. Technol. B1, 778 (1983).

53. Traps at the Deposited Insulator/InP Interface: A Discussion of a Possible Cause, C. W. Wilmsen, J. F. Wager, K. M. Geib, T. Hwang and M. Fathipur, Thin Solid Films 103, 47 (1983).

54. Photo Enhanced Thermal Oxidation of InP, M. Fathipour, K. Boyer, G. J. Collins, C. W. Wilmsen, J. Appl. Phys. 57, 637 (1985).

55. Composition and Structure of Thermal Oxides of Indium Phosphide, A. Nelson, K. M. Geib and C. W. Wilmsen, J. Appl. Phys. 54 4134 (1983).

56. Surface Topography of Oxides on InP Thermally Grown at High Temperatures, J. J. McLaren, A. Nelson, K. Geib, R. Gann and C. W. Wilmsen, J. Vac. Sci. Technol. A1, 1486 (1983).

57. Valley Splitting on Titled Si (100) Surfaces, S. M. Goodnick, J. R. Sites, K. S. Yi, D. K. Ferry and C. W. Wilmsen, Phys. Lett. 97, 111 (1983).

58. A Monte Carlo Study of Si (111) Surface Oxidation, S. E. Goodnick, W. Porod, R. R. Grondin, S. M. Goodnick, C. W. Wilmsen and D. K. Ferry, J. Vac. Sci. Technol. B1, 767 (1983).

59. Surface Roughness Scattering at the Si-SiO2 Interface. S. M. Goodnick, R. G. Gann, J. R. Sites, D. K. Ferry and C. W. Wilmsen, Vac. Sci. Technol. B1, 803 (1983).

60. New Model for Slow Drift in InP Metal-Insulator-Semiconductor-Field Effect Transistor, S. M. Goodnick, T. Hwang and C. W. Wilmsen, Appl. Phys. Letters 44, 453 (1984).

61. Influence of Interfacial Structure on the Electronic Properties of SiO2/InP MISFETs, K. M. Geib, S. M. Goodnick, D. Y. Lin, R. G. Gann, C. W. Wilmsen and J. F. Wager, J. Vac. Sci. Technol. B2, 516 (1984).

62. Thermal Oxidation of GaP, Y. Kato, K. M. Geib, R. G. Gann, P. R. Brusenback and C. W. Wilmsen, J. Vac. Sci. Technol. A2, 588 (1984).

63. A Combined HREM, XPS and Electrical Properties Study of the InP-SiO2 Interface, O. L. Krivanek, Z. Liliental, J. F. Wager, R. G. Gann, S. M. Goodnick and C. W. Wilmsen, J. Vac. Sci. Technol. B3, 1081 (1985).

64. High Pressure Thermal Oxide/InP Interface, K. M. Geib, R. Gann, J. Costello, G. Hryckowian, R. J. Zeto and C. W. Wilmsen, J. Vac. Sci. Technol. B3, 1103 (1985).

65.[PDF] Surface Roughness at the Si(100)-SiO2 Interface, S. M. Goodnick, D. K. Ferry, Z. Liliental, D. Fathy, O. L. Krivanek and C. W. Wilmsen, Phys. Rev. B. 32, 8171 (1985).

66. Correlation of Si-SiO2 Interface Roughness with MOSFET Carrier Mobility, Z. Liliental, O. L. Krivanek, S. M. Goodnick and C. W. Wilmsen, Mat. Res. Soc. Symp. Proc. Vol 37, 1985 Materials Research Society.

67. Characterization of b-SiC Surfaces and the Au/SiC Interface, Y. Mizokawa, K. M. Geib and C. W. Wilmsen, J. Vac. Sci. Technol. A4, 1696 (1986).

68. Anodized Al-InP Interface, T. Hwang, R. R. Chang, K. M. Geib and C. W. Wilmsen, J. Vac. Sci. Technol. A4, 1018 (1986).

69. Compositional Profiles of Anodized Aluminum on InP, T. Hwang, R. R. Chang, K. M. Geib and C. W. Wilmsen, Thin Solid Films 145, 225 (1986).

70. Growth of Anodic Al2O3/Native Oxide Double Layers on InP, R. R. Chang, T. Hwang, K. M. Geib and C. W. Wilmsen, J. Electrochem. 134(5), 1243 (1987).

71. Comparison of the C KLL First-derivative Auger Spectra from XPS and AES using Diamond, Graphite, SiC and Diamond-Like-Carbon Films, Y. Mizokawa, T. Miyasato, S. Nakamura, K. M. Geib and C. W. Wilmsen, Surface Science 182, 431 (1987).

72. Fe Reactions with b-SiC, K. M. Geib, C. W. Wilmsen, J. E. Mahan and M. C. Bost, J. Appl. Phys. 61, 5299 (1987).

73. Two Dimensional Electron Transport in InP Surface Layers, G. R. Bailey, R. E. Owens, C. C, Wilmsen and S. M. Goodnick, J. Vac. Sci. Technol. B5(4), 976 (1987).

74. The CKLL First Derivative Spectra of XPS as a Fingerprint of the Carbon State and Characterization of Diamondlike Carbon Films, Y. Mizokawa, T. Miyasato, S. Nakamura, K. M. Geib and C. W. Wilmsen, J. Vac. Sci. Technol. A5, 2809 (1987).

75. Growth of Anodic Al2O3/Native Oxide Double Layers on InP, R. R. Chang, T. Hwang, K. M. Geib, C. W. Wilmsen, J. Electrochem. Soc. 134, 1243 (1987).

76. High Pressure Steam Oxidation of InP, R. Gann, K. M. Geib, C. W. Wilmsen, J. Costello, G. Hryckowian, R. J. Zeto, J. Appl. Phys. 63, 506 (1988).

77. Oxide Passivation of Photochemically Unpinned GaAs, P. D. Kirchner, A. C. Warren, J. M. Woodall, C. W. Wilmsen, S. L. Wright and J. M. Baker, J. Electrochem. Soc. 135, 1822 (1988).

78. Characterization of Photochemically unpinned GaAs, C. W. Wilmsen, P. D. Kirchner, J. M. Baker, D. Pettit, D. McInturff and J. M. Woodall, J. Vac. Sci. Technol. B6, 1180 (1988).

79. Effects of N2, O2, and H2O on the Surface Photoluminescence of GaAs Passivated by Photowashing or coating with Na2S.9H2O, C. W. Wilmsen, P. D. Kirchner and J. M. Woodall, J. Appl. Phys. 64, 3287 (1988).

80. Oxidation of GaAs, C. W. Wilmsen, Gallium Arsenic Technology, Vol. II, D. K. Ferry, Ed. SAMS, Indianapolis (1988).

81. Insulator/Semiconductor Interfaces, C. W. Wilmsen, Submicron Devices, H. Grubin (Ed), Plenum (1988).

82. The Sulfurized InP Surface, C. W. Wilmsen, K. M. Geib, J. Shin, R. Iyer, D. L. Lile and J. J. Pouch, J. Vac. Sci. Technol. B7, 851 (1989).

83. Influence of Interfacial Roughness on Parallel Transport at Oxide-Semiconductor and Heterojunction Interfaces, S. M. Goodnick, J. E. Lary, R. Owens, O. Sri and C. Wilmsen, J. Vac. Sci. Technol. B7, 1035 (1989).

84. High Pressure Oxidation of InP Through an SiO2 Overlayer, K. M. Geib, R. Chang, D. L. Lile, C. W. Wilmsen, G. Hryckowian and R. Zeto, J. Vac. Sci. Technol. B7, 1126 (1989).

85. Structure and Chemical Composition of Water Grown Oxides on GaAs, Z. Liliental-Weber, C. W. Wilmsen, K. M. Geib, P. D. Kirchner, J. M. Baker and J. M. Woodall, J. Appl. Phys. 67(4), 1863 (1990).

86. W/SiC Contact Resistance at Elevated Temperatures, K. M. Geib, J. E. Mahan and C. W. Wilmsen, P. 224 of Amorphous and Crystalline Silicon Carbide II, Springer Verlag.

87. The Chemistry of Sulfur Passivation of GaAs Surfaces, J. Shin, K. M. Geib, C. W. Wilmsen and Z. Liliental-Weber, J. Vac. Sci. Technol. A. 8, 1894 (1990).

88. Reaction Between SiC and W, Mo and Ta at Elevated Temperatures, K. M. Geib, C. Wilson, R. Long and C. W. Wilmsen, J. Appl. Phys. 68, 2796 (1990).

89. Formation of S-GaAs Surface Bonds, K. M. Geib, J. Shin, and C. W. Wilmsen, J. Vac. Sci. Technol. B8, 838 (1990).

90. Effects of Annealing on Anodic Oxides of GaP, Y. Kato, K. M. Geib, R. G. Gann, P. R. Brusenback and C. W. Wilmsen, J. Vac. Sci. Technol., B9, 1530 (1991).

91. Sulfur Bonding to GaAs, J. Shin, K. M. Geib and C. W. Wilmsen, J. Vac. Sci. Technol. B9, 2337 (1991).

92. The Thermal Oxidation of AlGaAs, J. Shin, K. M. Geib, C. W. Wilmsen, P. Chu and H. H. Wieder, J. Vac. Sci. Technol., A9, 1029 (1991).

93. [PDF] Integrated Optical Inverter Using a Light Amplifying Optical Switch, F. R. Beyette, Jr., S. A. Feld, X. An, K. M. Geib, M. J. Hafich, G. Y. Robinson and C. W. Wilmsen, Electronics Letters, 27, 497 (1991).

94. [PDF] Electrical and Optical Feedback in an InGaAs/InP Light Amplifying Optical Switch (LAOS), S. A. Feld, F. R. Beyette, Jr., M. J. Hafich, H. Y. Lee, G. Y. Robinson and C. W. Wilmsen, IEEE Trans. Electron Devices, 38, 2452 (1991).

95. [PDF] Switching Light with Light, C. W. Wilmsen, S. A. Feld, F. R. Beyette, Jr. and X. An, IEEE Circuits and Devices, 7, 21 (1991).

96. [PDF] Integrated Optical NOR Gate, F. R. Beyette, Jr., K. M. Geib, S. A. Feld, X. An, M. J. Hafich, G. Y. Robinson and C. W. Wilmsen, Photonics Technol. Letters, 4, 390 (1992).

97. [PDF] Integrated Optical NAND Gate, X. An, K. M. Geib, M. J. Hafich, L. M. Wood, S. A. Feld, F. R. Beyette, Jr., G. Y. Robinson, C. W. Wilmsen, Electronics Letters, 28, 1545 (July 1992).

98. Two Wavelength Optically Controlled Latch and Gate, X. An, K. M. Geib, M. J. Hafich, T. E. Crumbaker, P. Silvestre, F. R. Beyette, Jr., S. A. Feld, G. Y. Robinson and C. W. Wilmsen, Appl. Phys. Letters, 61, 636 (Aug. 1992).

99. [PDF] Smart Pixels Using the Light Amplifying Optical Switch (LAOS), C. W. Wilmsen, F. R. Beyette, Jr., X. An, S. A. Feld and K. M. Geib, IEEE J. Quantum Electronics, 29, 769 (February 1993).

100. [PDF] Highly Compact Integrated Optical Set-Reset Memory Pixels for Parallel Processing Arrays, X. An, K. M. Geib, M. J. Hafich, F. R. Beyette, Jr., S. A. Feld, G. Y. Robinson and C. W. Wilmsen, Photonics Technol. Lett., 5, 545, (May 1993).

101. [PDF] Optoelectronic Exclusive-OR (XOR) Gate, F. R. Beyette Jr., K. M. Geib, S. A. Feld, M. J. Hafich, X. An, G. Y. Robinson, and C. W. Wilmsen, Photonics Technol. Lett., 5, 686, (June 1993).

102. Passivation of GaAs and InP, V. Malhotra and C. W. Wilmsen, in Modern Compound Semiconductor Technology and Devices, eds. P.H. Holloway and G. E. McGuire, Noyes Publication (1993).

103. Oxides of InGaAs, C. W. Wilmsen, in Properties of Latticed-Matched and Strained InGaAs, ed. P. Bhattacharya, IEE (1993).

104. Iron Carbide Formed by Reacting Surface Hydrocarbons with an Iron Film, K. M. Geib and C. W. Wilmsen, Surface Science Spectra, 1 297, (1993).

105. [PDF] Optoelectronic Exclusive-OR Using Hybrid Integration of Phototransistors and Vertical Cavity Surface Emitting Lasers, F. R. Beyette, Jr., K. M. Geib, C. M. St. Clair, S. A. Feld, and C. W. Wilmsen, IEEE Photonics Technology Letters, Vol. 5, 1322, (November 1993).

106. An Optoelectronic Data Filter for Selection and Projection, P. A. Mitkas L. J. Irakliotis, F.R. Beyette, Jr., S. A. Feld and C. W. Wilmsen, Applied Optics, 33, 1345 (March 1994).

107. Optical Digital Comparison Unit for Equal-to, Less-than and Greater-than Determination, P. A. Mitkas, S. A. Feld, F. R. Beyette, Jr., and C. W. Wilmsen, Applied Optics, 33, 806 (February 1994).

108. Bitonic Sorting Using an Optoelectronic Recirculating Architecture, F. R. Beyette, Jr., P. A. Mitkas, S. A. Feld, and C. W. Wilmsen, Applied Optics, 33, 8164 (December 1994).

109. Coherence of VCSELs for Holographic Interconnections, J. L. A. Chilla, B. Benware, M. E. Watson, P. Stanko, J. J. Rocca, C. W. Wilmsen, S. Feld and R. Leibenguth, IEEE Photonics Tech. Lett., May 1995.

110. [PDF] Optoelectronic Parallel Processing with Surface-Emitting Lasers and Free Space Interconnects, L. J. Irakliotis, S. A. Feld, F. R. Beyette, P. A. Mitkas and C. W. Wilmsen, IEEE J. Lightwave Tech. 13, 1074 (June 1995).

111. Linewidth and a-factor in AlGaAs/GaAs Vertical Cavity Surface Emitting Lasers, D. Kuksenkov, S. Veld, C. Wilmsen, H. Temkin, S. Swirhun and R. Leibenguth, Appl. Physics Lett. 66, 277 (January 1995).

112. Pressure and Temperature Induced Detuning of Gain and Reflectivity Spectra in Vertical Cavity Surface Emitting Lasers, C. H. McMahon, J. W. Bae, C. S. Menoni, D. Patel, S. Feld, C. Wilmsen, H. Temkin, P. Brusenbach and R. Leibenguth, J. Physics and Chemistry of Solids, 56, 663 (1995).

113. Ultrahigh Frequency Oscillations and Multimode Dynamics in VCSELs, O. Buccafusca, J.L.A. Chilla, J.J. Rocca, C. Wilmsen and S. Feld, Applied Phys. Lett., 67, 185 (July, 1995).

114. Transverse Mode Dynamics in VCSELs Excited by Fast Electrical Pulses, O. Buccafusca, J.L.A. Chilla, J.J. Rocca, S. Feld, C. Wilmsen, V. Morosov and R. Leibenguth, submitted Applied Phys. Letters, 68, 590 (1996).

115. An Optoelectronic Recirculating Sorter Based on CMOS/VCSEL Smart Pixel Arrays: Architectures and System Demonstration , F. R. Beyette, R. Stanko, E. M. Hayes, R. D. Snyder, S. A. Feld, P. A. Mitkas and C. W. Wilmsen, Optical Review, 3, 373, (1996).

116. Transverse Mode Dynamics in VCSELs Excited by Fast Electrical Pulses , O. Buccafusca, J. Chilla, J. J. Rocca, C. W. Wilmsen, V. Morogov and R. Leibenguth, Applied Phys. Lett., 68, (1996).

117. Optical Memory - Electronic Computer Interface as a Parallel Processing Architecture , J. of Parallel and Distributed Computing, 41, 67-77 (1997), L. J. Irakliotis, C. W. Wilmsen and P. A. Mitkas, 41, 67, (1997).

118. [PDF] Demonstration of a VCSEL - Based Optoelectronic Look-Up Table , L. J. Irakliotis, P. J. Stanko, C. W. Wilmsen and P. A. Mitkas, IEEE Photonics Tech. Lett., 9, 502 (1997).

119. Database Filter: Optoelectronic Design and Implementation , R. D. Snyder, S. A. Feld, P. J. Stanko, E. M. Hayes, G. Y. Robinson, C. W. Wilmsen, K. M. Geib and K. D. Choquette, Applied Optics, 36, 4881 (1997).

120. Foundry Fabricated Array of Smart Pixels Integrating MESFETs/MSMs and VCSELs , E. M. Hayes, G. Y. Robinson, C. W. Wilmsen, K. D. Choquette, K. M. Geib and H. Q. Hou, International Journal of Optoelectronics, 11, 229, (1997)

121. VCSEL based High Performance ATM Switch Based on a Three-Stage Architecture , C. W. Wilmsen, J. R. Collington, M. P. Dames and W. A. Crossland, submitted to Optical Engineering

122. [PDF] "VCSELs Bonded Directly to Foundry Fabricated GaAs Smart Pixel Arrays, Rui Pu, E. M. Hayes, R. Jurrat, C.W. Wilmsen, K.D. Choquette, H.Q. Hong and K.M. Geib, IEEE Photonics Technology Letters, 9, 1622, (Dec 1997).

123. An Optoelectronic Recirculating Sorter: Architecture and System Demonstration, F.R. Beyette, Jr., P.J. Stanko, E.M. Hayes, R.D. Snyder and C.W. Wilmsen, Optical Engineering, 37, 312-319 (1998).

124. [PDF] "Hybrid Integration of VCSELs to CMOS Integrated Circuits, Rui Pu, C. Duan and C.W. Wilmsen, J. Selected Topics Quantum Electronics, vol. 5, pp. 201-208 (1999).

125. Comparison of Techniques for Bonding VCSELs Directly to IC's, Rui Pu, E.M. Hayes, C.W. Wilmsen, K.D.Choquette, H.Q.Hou and K.M. Geib, J.European Optical Society, vol. 1, pp. 324- 329, (1999).

126. [PDF] "VCSEL-Based Optoelectronic Asynchronous Transfer Mode Switch, C.W. Wilmsen, C. Duan, J.R. Collington, M.P. Dames and W.A. Crossland, Optical Engineering, vol. 38, pp. 1216-1222 (1999).

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