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Journal Publications:

  1. "Transport and Localized Levels in Amorphous Binary Chalcogenides," with R.H. Bube, R.T.-S. Shiah, and H.A. Vander Plas, Applied Physics Letters 25 (7), 419 (1974).

  2. "Electronic Transport in Amorphous Germanium Arsenides," with C.J. Park, R.H. Bube, R.T.-S. Shiah, and H. Vander Plas, Journal of Applied Physics 46 (12), 5307 (1975).

  3. "Optical and Electrical Properties of Amorphous Arsenic," with J.C. Knights, Solid State Communications 21 , 983 (1977).

  4. "The Field Effect in Amorphous Chalcogenides: an Investigation of Localized States and Electronic Transport," with R.H. Bube, Journal of Noncrystalline Solids 24 (1), 29 (1977).

  5. "Open Circuit Voltage of Vertical Junction Photovoltaic Devices at High Intensity," with T.W. Ekstedt, R.I. Frank, and R. Kaplow, Applied Physics Letters 33 (5), 422 (l978).

  6. "Measurement of Minority Carrier Lifetime in Solar Cells from Photo-Induced Open Circuit Voltage Decay," with T.W. Ekstedt, R.I. Frank, and R. Kaplow, IEEE Transactions on Electron Devices ED-26 No. 5, 733 (1979).

  7. "Distributed Series Resistance in Photovoltaic Devices: Intensity and Loading Effects," with G.M. Smirnov, Solid State Electronics 23 , 1055 (1980).

  8. "Laser Photodeposition of Refractory Metals," with R. Solanki, P.K. Boyer, and G.J. Collins, Applied Physics Letters 38 (7), 572 (1981).

  9. "Series Resistance Effects in 20 cm 2 ITO/Polysilicon Solar Cells," with A.P. Genis, C. Osterwald, and J.B. DuBow, Solar Cells 4 (2), 127 (1981).

  10. "Depletion Layer Effects in the Open Circuit Voltage Decay Lifetime Measurement," with D.L. Barnes, Solid State Electronics 24 , No. 10, 989 (1981).

  11. "Electronic Transport and Microstructure in Molybdenum Silicide Thin Films," with R.E. Weinmeister, Applied Physics Letters 39 (12), 977 (1981).

  12. "Threshold and Memory Switching in Polycrystalline Silicon," Applied Physics Letters 41 (5), 479 (1982).

  13. "Gigaohm-Range Polycrystalline Silicon Resistors for Microelectronic Applications," with D.S. Newman and M.R. Gulett, IEEE Transactions on Electron Devices ED-30 (1), 45 (1983).

  14. "Electronic Transport Properties of TiSi 2 Thin Films," with V. Malhotra and T.L. Martin, Journal of Vacuum Science and Technology B3 (1), 10 (1984).

  15. "Electronic Transport Properties of Tungsten Silicide Thin Films," with T.L. Martin and V. Malhotra, Journal of Electronic Materials 3 (2), 309 (1984).

  16. "Electronic Transport Properties of Refractory Metal Disilicides," with T.L. Martin, V. Malhotra, and M.T. Huang, Journal of Vacuum Science and Technology A2 (2), Pt.1, 271 (1984).

  17. "Electrical Properties of Selectively Deposited Tungsten Thin Films," with W.A. Metz, V. Malhotra, and T.L. Martin, Applied Physics Letters 44 (12), 1139 (1984).

  18. "Electronic Transport Properties of Tantalum Disilicide Thin Films," with M.T. Huang, T.L. Martin, and V. Malhotra, Journal of Vacuum Science and Technology B3 (3), 836 (1985).

  19. "Materials Aspects of Electrical Switching Phenomena in Vertical Polycrystalline Silicon Structures," with V. Malhotra and D.L. Ellsworth, Journal of Vacuum Science and Technology A3 (3), 688 (1985).

  20. "Fundamentals of Memory Switching in Vertical Polycrystalline Silicon Structures," with V. Malhotra and D.L. Ellsworth, IEEE Transactions on Electron Devices, ED-32 (11), 2441 (1985).

  21. [PDF] "Optical Properties of Semiconducting Iron Disilicide Thin Films," with M.C. Bost, Journal of Applied Physics 58 (7), 2696 (1985).

  22. "Electronic Transport and Microstructure in MoSi 2 Thin Films," with T.L. Martin, Journal of Materials Research 1 (3), 493 (1986).

  23. "Summary Abstract: Semiconducting Silicides as Potential Materials for Electro-optic VLSI Interconnects," with M.C. Bost, Journal of Vacuum Science and Technology, B4 (6), 1336 (1986).

  24. "Fe Reactions with Beta-SiC," with K.M. Geib, C.W. Wilmsen, and M.C. Bost, Journal of Applied Physics 61 (12), 5299 (l987).

  25. "An Optical Determination of the Bandgap of the Most Silicon-Rich Manganese Silicide Phase," with M.C. Bost, Journal of Electronic Materials, Vol. 16, No. 6, 389 (1987).

  26. "An Investigation of the Optical Constants and Bandgap of Chromium Disilicide," with M.C. Bost, Journal of Applied Physics 63 (3), 839 (1988).

  27. [PDF] "A Clarification of the Index of Refraction of Beta-Iron Disilicide," with M.C. Bost, Journal of Applied Physics 64 (4), 2034 (1988).

  28. "Optical and Electrical Properties of Semiconducting Rhenium Disilicide Thin Films," with R.G. Long and M.C. Bost, Thin Solid Films, 162 , 29 (1988).

  29. [PDF] "An Electrothermal Model of Memory Switching in Vertical Polycrystalline Silicon Structures," with V. Malhotra and D.L. Ellsworth, IEEE Trans. on Electron Devices, Vol. 35, No. 9, 1514 (l988).

  30. "The Metallic Behavior of Lanthanum Disilicide," with R.G. Long and M.C. Bost, Applied Physics Letters 53 (14), 1272 (1988).

  31. "Two Pseudobinary Semiconducting Silicides; Re x Mo 1-x Si 2 and Cr x V 1-x Si x ," with Robert G. Long, Applied Physics Letters 56 (17), 1655 (1990).

  32. "Epitaxial Tendencies of ReSi 2 on (001) Silicon," with Kent M. Geib, Gary Y. Robinson, Robert G. Long, Yan Xinghua, Gang Bai, Marc-A. Nicolet, and Menachem Nathan, Applied Physics Letters 56 (24), 2439 (1990).

  33. "Channeling of MeV Ions in Polyatomic Epitaxial Films: ReSi 2 on Si(100)," with G. Bai, M-A. Nicolet, and Kent M. Geib, Physical Review B, Vol. 41, No. 13, 8603 (1990).

  34. [PDF] "Epitaxial Films of Semiconducting FeSi 2 on (001) Silicon," with Kent M. Geib, G. Y. Robinson, Robert G. Long, Yan Xinghua, Gang Bai, Marc-A. Nicolet, and Menachem Nathan, Applied Physics Letters 56 (21), 2126 (1990).

  35. "A Review of the Geometrical Fundamentals of Reflection High-Energy Electron Diffraction with Application to Silicon Surfaces," with Kent M. Geib, G.Y. Robinson and Robert G. Long, Journal of Vacuum Science and Technology A8 (5), 3692 (1990).

  36. "Radiation Damage in ReSi 2 by MeV He Beam," with G. Bai, M-A. Nicolet, and K.M. Geib, Applied Physics Letters 57 (16), 1657 (1990).

  37. "Reflection High-Energy Electron Diffraction Patterns of CrSi 2 Films on (111) Silicon," with Kent M. Geib, G.Y. Robinson, G. Bai, and M-A. Nicolet, Journal of Vacuum Science and Technology B9 (1), 64 (1991).

  38. "Epitaxial Orientation and Morphology of ß-FeSi 2 on (001) Silicon," with K.M. Geib, Robert G. Long, Menachem Nathan, and G. Bai, Journal of Applied Physics 70 (3), 1730 (1991).

  39. "Amorphization and Recrystallization of Epitaxial ReSi 2 Films Grown on Si(100)," with K.H. Kim, G. Bai, M-A. Nicolet, and K.M. Geib, Applied Physics Letters 58 (17), 1884 (1991).

  40. "Microstructure and Morphology of Some Epitaxial ReSi 2 Films on (001) Silicon," with G. Bai, M-A. Nicolet, Robert G. Long, and Kent M. Geib, Thin Solid Films 207 , 223 (1992).

  41. "Semiconducting Silicide-Silicon Heterostructures: Growth, Properties, and Applications," with J. Derrien, J. Chevrier, and V. Le Thanh, Applied Surface Science 56-58 , 382 (1992).

  42. [PDF] "Surface Electron Diffraction Patterns of ß-FeSi 2 Films, Epitaxially Grown on Silicon," with V. LeThanh, J. Chevrier, I. Berbezier, J. Derrien and R.G. Long, Journal of Applied Physics, 74 (3), 1747 (1993).

  43. "Reactive Deposition Epitaxy of CrSi 2 ," with A. Vantomme, M-A. Nicolet, and R.G. Long, Applied Surface Science, 73 , 146 (1993).

  44. [PDF] "Reflection High Energy Electron Diffraction Patterns of Carbide-Contaminated Silicon Surfaces," with J.P. Becker and R.G. Long, Journal of Vacuum Science and Technology, A12 (1), 174 (1993).

  45. [PDF] "Epitaxial Ternary Re x Mo 1-x Si 2 Thin Films on Si(100)," with A. Vantomme, M-A. Nicolet, and R.G. Long, Journal of Applied Physics 75 (8), 3924 (1994).

  46. "Heteroepitaxial Relationships for CrSi 2 Thin Films on Si(111)," with Robert G. Long and James P. Becker, Journal of Applied Physics 77 (7), 3088 (1995).

  47. [PDF] "Infrared Detection with a ReSi 2 Thin Film Photoresistor," with Robert G. Long and James P. Becker, Applied Physics Letters 66 (7), 875 (1995).

  48. [PDF] "ReSi 2 Thin Film Infrared Detectors," with James P. Becker and Robert G. Long, Journal of Vacuum Science and Technology A13 (3), 1133 (1995).

  49. “Semiconducting Mg 2 Si Thin Films Prepared by Molecular Beam Epitaxy,” with A. Vantomme and J.P. Becker, Physical Review B, Vol. 54, No. 23, 16965 (1996).

  50. “A Simplified Collisional Model of Sputtering in the Linear Cascade Regime,” with A. Vantomme, Journal of Vacuum Science and Technology A15 (4), 1976 (1997).

  51. [PDF] “On the van der Waals Epitaxial Growth of GaSe on Si 111,” with Le Than Vinh, M. Eddrieff, A. Vantomme, J.H. Song, and M-A. Nicolet, Journal of Applied Physics 81 (11), 7289 (1997).

  52. [PDF] “Thin Film Growth of Semiconducting Mg 2 Si by Codeposition,” with A. Vantomme, G. Langouche, J.P. Becker, M. Van Bael, K. Temst, and C. Van Haesendonck, Applied Physics Letters 70 (9), 1086 (1997).

  53. “Trends in Sputter Yield Data in the Film Deposition Regime,” with A. Vantomme, Phys. Rev. B, Vol. 61, No. 12, 8516 (2000).

  54. [PDF] “Bringing an Emphasis on Technical Writing to a Freshman Course in Electrical Engineering,” with A. Jayasumana, D. Lile, and M. Palmquist, IEEE Trans. Educ., Vol. 43, No. 1, 36 (2000).

  55. “The Potential of Higher Manganese Silicide as an Optoelectronic Thin Film Material,” to appear in Thin Solid Films.


Conference Presentations:

  1. "Field Effect in Amorphous Chalcogenide Semiconductors," Berkeley Meeting of the American Physical Society, December 27-29, 1973.

  2. "Field Effect in Amorphous Chalcogenides," paper given at the Meeting on Amorphous and Liquid Semiconductors," Chelsea College, London, December 17-19, 1975.

  3. "A New Perspective on Distributed Series Resistance Effects in Photovoltaic Devices," with G.M. Smirnov, Proceedings of the Fourteenth IEEE Photovoltaic Specialists Conference, San Diego, CA, January 7-10, 1980, 612.

  4. "Indium Tin Oxide/Silicon Solar Cells on Polycrystalline Substrates Fabricated by Neutralized Ion Beam Sputtering," with A.P. Genis, C. Osterwald, P. Smith, R. Singh, and J.B. DuBow, Proc. of the Int'l Soc. for Hybrid Microelectronics, New York, October, 1980.

  5. "Electronic Transport and Microstructure in Refractory Metal Silicide Thin Films," with T.L. Martin and V. Malhotra, 24 th Electronic Materials Conference, Fort Collins, CO, June 23-25, 1982.

  6. "Gigaohm-Range Polycrystalline Silicon Load Elements for a CMOS 16K Static RAM," with M.R. Gulett and D.S. Newman, 40 th Annual IEEE Device Research Conference, Fort Collins, CO, June 21-23, 1982.

  7. "Electronic Transport Properties of Refractory Metal Silicides," with T.L. Martin and V. Malhotra, 30 th National Symposium of the American Vacuum Society, Boston, MA (Nov. 1-4, 1983).

  8. "Electron Transport Properties of Tantalum and Molybdenum Silicide Thin Films," with M.T. Huang, T.L. Martin, and V. Malhotra, and "Semiconducting Chromium and Iron Disilicide Thin Films," with M.C. Bost, Posters presented at the 1984 Annual Symposium of the Rocky Mountain Chapter of the American Vacuum Society, Denver, CO (May 10, 1984).

  9. "Materials Aspects of Electrical Switching Phenomena in Vertical Polycrystalline Silicon Structures," with V. Malhotra and D.L. Ellsworth, 31 st National Symposium of the American Vacuum Society, Reno, Nevada (Dec. 4-7, 1984).

  10. "Electronic Transport and Microstructure in MoSi 2 Thin Films," with T.L. Martin, 1985 Electronic Materials Conference, Boulder, CO (June 19-21, 1985).

  11. "Semiconducting Silicides: Potential Materials for Electro-optic VLSI Interconnects," with M.C. Bost, 4th Workshop on Refractory Metals and Silicides, San Juan Bautista, CA (May 12-15, 1986).

  12. "Semiconducting Silicides: Potential Materials for Electro-optic VLSI Interconnects," with M.C. Bost, 1986 Electronic Materials Conference, Amherst, MA (June 25-27, 1986).

  13. "The W/SiC Interface at Elevated Temperatures," with K.M. Geib and C.W. Wilmsen, Tenth Symposium on Applied Surface Analysis, American Vacuum Society, Denver, CO (April 27-29, l988).

  14. "ReSi 2 , a Narrow Bandgap Semiconductor," with Robert G. Long and M.C. Bost, Workshop on Metals, Dielectrics, and Interfaces for VLSI, San Juan Bautista, CA (May 9-12, l988).

  15. "W/SiC Contact Resistance at Elevated Temperatures," with K.M. Geib and C.W. Wilmsen, Second International Conference on Amorphous and Crystalline Silicon Carbide and Related Materials, Santa Clara University, Santa Clara, CA (December l5-l6, l988).

  16. "Heteroepitaxy of ReSi 2 on Si(001)," with Robert G. Long, Kent M. Geib, G. Bai, and M-A. Nicolet, Third International Conference on the Formation of Semiconductor Interfaces, Rome (6-10 May, 1991).

  17. "Semiconducting Silicide-Silicon Heterostructures -- Growth, Properties, and Applications," with J. Derrien, J. Chevrier, and V. Le Thanh, Third International Conference on the Formation of Semiconductor Interfaces, Rome (6-10 May, 1991).

  18. 18. "Epitaxial Growth and Properties of Thin Films of Semiconducting Silicides," 1992 Electronic Materials Conference, Cambridge, MA (24-26 June).

  19. "Epitaxial CrSi 2 on Si(111) Grown by MBE vs. RDE," with R.G. Long, J.P. Becker, A. Vantomme, and M-A. Nicolet, 1993 Electronic Materials Conference, Santa Barbara, (23-25 June).

  20. "The Template Growth Technique Applied to CrSi 2 Epitaxy on Si(111)," with R. G. Long, A. Vantomme, and M-A. Nicolet, Materials Research Society Symposium Proceedings, Vol. 317 (Materials Research Society, Pittsburgh, PA, 1994).

  21. "ReSi 2 Thin Film Infrared Detectors," with J. P. Becker and R.G. Long, 41 st National Symposium of the American Vacuum Society, Denver, CO (24-28 October, 1994).

  22. “Growth of Semiconducting Mg 2 Si Thin Films by Codeposition,” with A. Vantomme, Langouche, J.P. Becker, M.J. Van Bael, K. Temst, and C. Van Haesendonck, Materials Research Society 1997 Fall Meeting, Boston, MA (1-5 December, 1997).

  23. “Growth Mechanisms and Optical Properties of Semiconducting Mg 2 Si Thin Films,” with A. Vantomme, G. Langouche, J.P. Becker, M.J. Van Bael, K. Temst, and C. Van Haesendonck, MAM ‘99, European Workshop on Materials for Advanced Metallization, Oostende, Belgium (8-10 March, 1999).

  24. “Defect Structures in Semiconducting ReSi 2-x Epitaxial Thin Films,” with A. Misra and T.E. Mitchell (Microscopy Society of America 1999 Meeting), Microscopy and Microanalysis, 5, Suppl. 2, Proceedings, 726 (1999).

  25. ”Characterization of Epitaxial Growth of Semiconducting Rhenium “Disilicide” Films,” with A. Misra, M. Verdier, and T.E. Mitchell, Mat. Res. Soc. Symp. Proc. Vol. 580, 135 (2000).

  26. Invited Paper: “The Potential of Higher Manganese Silicide as an Optoelectronic Thin Film Material,” International Conference on Advanced Materials, Yokohama, Japan (11-13 October, 2003).