Derek L. Lile
Publications

JOURNAL PUBLICATIONS

  1. "Bringing an Emphasis on Technical Writing to a Freshman Course in Electrical Engineering" with J. Mahan, A. Jayasumana, and M. Palmquist. IEEE Trans. on Education 43, February 2000.

  2. "Multiple-Quantum-Well Optical Modulators in Strained In1-xGaxAs/GaAs on GaAs and Strain-Balanced In1-xGaxAs/In1-yGayP on InP for Smart-Pixel Application,"with Y. J. Lee, J. W. Kim, T. J. Vogt and G. Y. Robinson, submitted to PTL, 1997.

  3. "Wannier-Stark Localization in a Strained-Layer InxGa1-xAs/InyGa1-yP Superlattice," with J. W. Kim, Y. J. Lee, T. J. Vogt, G. A. Patrizi and G. Y. Robinson, J. Appl. Phys., 1996.

  4. [PDF] "Saturation Intensity and Time Response of InGaAs/InGaP MQW Optical Modulators," with M. E. Watson, J.L.A. Chilla, J. J. Rocca, J.-W. Kim, T. J. Vogt and G. Y Robinson, IEEE J. of Quantum Electronics, 31, 254 (1995).

  5. [PDF] "A Low Drive Voltage Electroabsorption Light Modulator Using an InGaAs/InP Superlattice," with C. W. Chen, J. W. Kim, P. Silvestre, M. J. Hafich, L. M. Woods and G. Y. Robinson, J. Appl. Phys. 74, 5895 (1993).

  6. "Strained Layer InxGa1-xAs/GaAs and InxGa1-xAs/InyGa1-yP MQW Optical Modulators Grown by Gas-Source MBE," with J. W. Kim, C. W. Chen, T. J. Vogt, L. M. Woods and G. Y. Robinson, EEE Photonics Technol. Lett. 5, 987 (1993).

  7. [PDF] "Interface State Analysis Using Integrated Room Temperature Gated Photoluminescence," with M. Ochiai and P. Sebestyen. Electronics Lett. 29, 568 (1993).

  8. "Role of the Native Oxide on Indium Antimonide Surface Properties," with W. Barth, Thin Solid Films, 229, 54 (1993).

  9. "Mass Spectrometric Studies of SiO2 Deposition in an Indirect Plasma Enhanced LPCVD System," with R. Iyer and C. M. McConica, J. Electrochem. Soc. 140, 1430 (1993).

  10. [PDF] "Gated Photoluminescence Method for Interface State Density Determination," with R. Iyer, Appl. Phys. Lett. 60, 754 (1992).

  11. [PDF] "InP Buried Channel Charge-Coupled Devices Grown by Gas-Source MBE," with K. Y. Han, R. Iyer, M. Hafich, and G. Y. Robinson, Electronics Lett. 28, 1795 (1992).

  12. "Role of Polysulfides in the Passivation of the InP Surface," with R. Iyer, Appl. Phys. Lett. 59, 437 (1991).

  13. "An Insulated-Gate MQW Optical Modulator on InP/InGaAs," with C. Chen, R. Iyer, M. Hafich and G. Y. Robinson, Appl. Phys. Lett. 57, (1990).

  14. "Preparation and Characterization of Dielectric Films for Compound and Alloy Semiconductor Field-Effect Devices," Solid State Electron 33, 401 (1990).

  15. "Photoluminescence Studies of Si-Implanted InP," with R. Chang, T. Huang, and S. Singh, J. Appl. Phys., 66, 3753 (1989).

  16. "Electrical Properties of Anodic and Deposited Dielectric MIS Structures on InSb," with C. W. Chen, J. Vac. Sci. Technol., 87, 1122 (1989).

  17. [PDF] "Sulfur as a Surface Passivation for InP," with R. Iyer and R. R. Chang, Appl. Phys. Lett. 53, 134 (1988).

  18. "The Effect of Phosphorous and Sulfur Treatment on the Surface Properties of InP," with R. Iyer, R. R. Chang and A. Dubey, J. Vac. Sci. and Technol. B6, 1174 (1988).

  19. "Kinetics of Low Pressure CVD Growth of SiO2 on InP and Si," with R. Iyer, J. Electrochem. Soc. 135, 691, March 1988.

  20. "Remote Gate C-V Studies for Non-Invasive Surface Characterization," with R. R. Chang and R. Gann, Appl. Phys. Lett., 51, 987 (1987).

  21. "Surface Characterization of InP Using Photoluminescence," with R.R. Chang and R. Iyer, J. Appl. Phys. 61, 1995 (1987).

  22. "A 64-bit 800 MHZ Insulated-Gate CCD on InP," with L. Messick and D. A. Collins, IEEE Electron Device Lett. EDL-7, 680 (1986).

  23. "Insulated Gate Device Development on the III-V Compounds,"Proceedings of the Electrochemical Society Symposium on Dielectrics for the III-V Compounds held in Las Vegas (1985).

  24. "Dielectric Layers for Device Applications on the III-V Compounds - An Assessment," Proceedings of INFOS '85 (1985).

  25. "An 800 MHZ Insulated Gate Buried Channel CCD on InP," with D. A. Collins, IEEE Electron Device Lett., EDL-5, 335 (1984).

  26. "High Mobility Insulated Gate Transistors on InP," with M. J. Taylor and A. K. Nedoluha, J. Vac. Sci. Tech. B-2, 522 (1984).

  27. "Interfacial Constraints on Device Performance," J. Vac. Sci. Tech. B-2, 496 (1984).

  28. "Radiation Tolerant NMOS Technology on InP," with M. J. Taylor, D. A. Collins, L. J. Messick, C. R. Zeisse and P. Pellegrini, IEEE Electron. Device Lett. (1984).

  29. "Transient Annealing of Indium Phosphide," with D. A. Collins and C. R. Zeisse, IEEE Electron. Device Lett., EDL-4, 231-233 (1983).

  30. "Interfacial Trapping and MIS Device Stability on InP," with M. J. Taylor and L. Meiners, Japan J. Appl. Phys. 22, (Suppl. 22-1), 389-392 (1983).

  31. "Insulated Gate Inversion and Accumulation Mode Charge Coupled Devices on InP," with D. A. Collins, Thin Solid Films 103, 53-60 (1983).

  32. "The Effect of Interfacial Traps on the Stability of MIS Devices on InP," with M. J. Taylor, J. Appl. Phys. 54, 260-267 (1983).

  33. "An 8-Bit, 4-Phase Surface Channel Charge-Coupled Devices on InP," with D. A. Collins, IEEE Trans. on Electron. Device., ED-29, 842-845 (1982).

  34. "A Microwave MIS FET Technology on InP," with D. A. Collins, L. G. Meiners and M. J. Taylor, Inst. Phys. Conf. Ser. 56, 493-502 (1980).

  35. "An Insulated-Gate Charge Transfer Device on InP," with D. A. Collins, Appl. Phys. Lett., 37, 552 (1980).

  36. "Theory and Experiment on the Time-Dependent Photovoltaic Effect in n-Type InSb," with G. Zaeschmar, Phys. Stat. Sol.(a) 58, K127 (1980).

  37. "Inversion Layers on InP," with L. G. Meiners and D. A. Collins, J. Vac. Sci. and Techn., 16, 1458 (1979).

  38. "Microwave Gain from an n-Channel Enhancement-Mode InP MISFET," with L. G. Meiners and D. A. Collins, Electron. Lett., 15, 578 (1979).

  39. "The Dielectric and Interfacial Characteristics of MIS Structures on InP and GaAs," with D. A. Collins, Thin Solid Films, 56, 225 (1979).

  40. Analysis of Anodically-Oxidized InP by MeV4 He+ Channeling Effect Measurements and Auger Electron Spectrometry," with R. J. Wagner, S. S. Lau, R. P. Kullen and N. K. Wagner, Nuclear Instr. and Methods (1978).

  41. [PDF] "n-Channel Inversion Mode InP MISFET," with D. A. Collins, L. G. Meiners and L. Messick, Electron. Lett., 14, 657 (1978).

  42. "The Effect of Surface States on the Characteristics of MIS Field-Effect Transistors," Solid-State Electron., 21, 1199 (1978).

  43. "A Microwave InP/SiO2 MISFET," with L. Messick and A. R. Clawson, Appl. Phys. Lett., 32, 494 (1978).

  44. "A Microwave GaAs Insulated Gate FET," with D. A. Collins, L. Messick and A. R. Clawson, Appl. Phys. Lett., 32, 247 (1978).

  45. "Carrier Profiling of InP," with D. A. Collins, Electron. Lett., 14, 457 (1978).

  46. "Electrical Properties of Anodic and Pyrolytic Dielectrics on Gallium Arsenide," with C. R. Zeisse and L. Messick, J. Vac. Sci. and Tech., 14, 957, (1977).

  47. "An InP MIS Diode," with D. A. Collins, Appl. Phys. Lett., 28, 554 (1976).

  48. "Depletion-Mode GaAs MOS FET," with A. R. Clawson and D. A. Collins, Appl. Phys. Lett., 29, 207 (1976).

  49. "Optical Techniques for Semiconductor Material and Circuit Inspection," with N. M. Davis, Solid-State Techn., July (1975).

  50. "Semiconductor Profiling Using an Optical Probe," with N. M. Davis, Solid-State Electron., 18, 699 (1975).

  51. "Generalized Photoelectromagnetic Effect in Semiconductors," Phys. Rev., 88, (1973).

  52. "Surface Photovoltage and Internal Photoemission at the Anodized InSb Surface," Surface Sci., 34, 337, (1973).

  53. "The Thin Film Surface Photodiode," with H. H. Weider, Thin Solid Films, 13, 15 (1972).

  54. "Determination of Optical Energy Gaps from Surface Photovoltage Measurements," with H. H. Weider, J. Appl. Phys., 43, 2265 (1972).

  55. "Electronic and Optical Properties of InAsxSb1-x Films," with A. R. Clawson and H. H. Weider, J. Vac. Sci. and Techn., 9, 976 (1972).

  56. "Carrier Generation Rate and Effective Lifetime in InSb thin Films," Solid-State Electron., 14, 855 (1971).

  57. "Plasma Generation in Thin InSb Layers," Proceedings of the Government Microcircuit Applications Conference (GOMAC), Ft. Monmouth, NJ (1970).

  58. "Effect of Surface Recombination on the Transverse Magnetoresistance of Thin InSb Layer," J. Appl. Phys., 41, 3480 (1970).

  59. "The Application of Polycrystalline Layers of InSb and PbTe to a Field-Effect Transistor," with J. C. Anderson, Solid-State Electron., 12, 735 (1969).

  60. "Electrical Surface Properties of Polycrystalline Layers of InSb and PbTe to a Field-effect Transistor," with J. C. Anderson, Solid-State Electron., 14, 855 (1971).

  61. "On the Error Associated with the MIS Method of Capacitance Measurement of Surface Density," with C. Juhasz, Proc. IEEE, 56, 189 (1968).

TECHNICAL BOOKS

  1. "Interfacial Constraints on III-V Compound MIS Devices," in Physics and Chemistry of III-V Compound Semiconductor Interfaces, edited by C. Wilmsen (Plenum, New York, 1985).

  2. "Metal-Insulator GaAs Structures," in GaAs Materials, Devices and ICs, edited by M. J. Howes and D. V. Morgan (John Wiley and Sons, 1985).

  3. "Optoelectronic Devices," in Modern Compound Semiconductor Technology and Devices, edited by P. H. Holloway and G. E. McGuire (Noyes Publications, 1995).

 

CONFERENCE PRESENTATIONS

  1. "History of InP Electronic Devices and their Future," Invited Plenary Session paper at the 10th International Conference on InP and Related Materials, Tsukuba, Japan, May 1998.

  2. "Modulation-Saturation Measurements on InGaAs/InGaP MQW Modulators," with M. E. Watson, J.L.A. Chilla, J. J. Rocca, J.-W. Kim, T. J. Vogt and G. Y Robinson, Presented at CLEO'94 held May 8-13, 1994, Anaheim, CA.

  3. [PDF] "Strained Layer InxGa1-xAs/GaAs and InxGa1-xAs/InyGa1-yP MQW Optical Modulators Grown by Gas-Source MBE," presented at the 5th International Conference on InP and Related Materials, Paris, April 18-22, 1993.

  4. "Low Voltage Electroabsorption Light Modulator Using an InGaAs/InP Superlattice," presented at the 5th International Conference on InP and Related Materials, Paris, April 18-22, 1993.

  5. "Transport of Electrons in the Near-Surface Region of InP," presented at the 5th International Conference on InP and Related Materials, Paris, April 18-22, 1993.

  6. "Effect of Moisture on the Electrical Properties of Spin-On-Glass," presented at the 9th International VLSI Multilevel Interconnection Conference, Santa Clara, June 1992.

  7. "MQW Modulators for SLMs and Smart Pixels," presented at SOEPS, Estes Park, August 1992.

  8. "Analysis of SiO2/InP Interfaces Using Gated Photoluminescence and Raman Spectroscopy," presented at the 4th International Conference on Indium Phosphide and Related Materials, Newport, R.I., April 1992.

  9. "Passivating SiS2 Films on InP," presented at the 4th International Conference on Indium Phosphide and Related Materials, Newport, R.I., April 1992.

  10. "Surface Analysis Using Gated PL and Raman Spectroscopy," presented at EXMATEC '92, Lyon, May 1992.

  11. "Quantum Wells in Optoelectronics," presented at the Annual meeting of the Rocky Mountain Chapter of the AVS, Lakewood, August 1991. (Invited).

  12. "Preparation and Characterization of Chemically Treated InP Surfaces for Passivation and MIS Applications," presented at the Electronic Materials Conference, Boulder, June 1991.

  13. "Spectral Photoluminescence and Raman Investigations of Surface Treatments on InP," presented at the Third International Conference on Indium Phosphide and Related Materials, Cardiff, April, 1991.

  14. "Preparation and Characterization of Polysulfide Treated InP MIS Structures," presented at the Third International Conference on Indium Phosphide and Related Materials, Cardiff, April, 1991.

  15. "Insulated-Gate Devices on InP for Application to Optoelectronics," presented at SOTAPOCS XIV, Washington, DC, May, 1991 (Invited).

  16. "Insulated-Gate MQW Structures on InGaAs/InP for Discrete Optical Modulators and CCD Addressed SLMs," Presented at the Topical Conference on Spatial Light Modulators and Applications, Lake Tahoe, Sept. 1990.

  17. "Transmission Modulation in InGaAs/InP Multiple Quantum Well MIS Diodes," presented at the 2nd International Conference on Indium Phosphide and Related Materials, Denver, April 1990.

  18. "Operation of InP Based Buried Channel Charge-Coupled Devices Grown by Gas-Source Molecular Beam Epitaxy," presented at the 2nd International Conference on Indium Phosphide and Related Materials, Denver, April 1990.

  19. "Effects of Surface Processing on the Performance of InP Depletion and Enhancement Mode MIS FETs," presented at the 2nd International Conference on Indium Phosphide and Related Materials, Denver, April 1990.

  20. "Electrical Properties of Polyimide for VLSI Interlevel Isolation," presented at PME '89, Tokyo, October 1989.

  21. "Preparation and Characterization of Dielectric Films for Compound and Alloy Semiconductor Field-Effect Devices," to be presented at the 6th International Symposium on Passivity, Sapporo, Japan, September l989 (Invited).

  22. "The Effects of Surface Treatment on Surface State Density and Surface Transport in InP", presented at the EMC, Boston, June 1989.

  23. "Downstream Plasma Activated Etching of III-V Semiconductors," presented at the EMC, Boston, June 1989.

  24. "Surface Passivation of InP", presented at the InP International Conference, Norman, March 1989.

  25. "InP/InGaAs Based CCD Devices for MQW Spatial-Light Modulator Applications", presented at the InP International Conference, Norman, March 1989.

  26. "Electrical Properties of Polymides for Interlevel Isolation and Active Device Gate Isolation, presented at VMIC, Santa Clara, June 1989.

  27. "InP/InGaAs Based CCD Devices for MQW Spatial-Light Modulator Applications", presented at the Topical Conference on Optical Computing, Salt Lake City, February 1989.

  28. "Downstream Plasma Activated Etching of III-V Compound Semiconductors," presented at the MRS Fall Meeting, Boston 1988.

  29. "Materials Technology for InSb MISFET Applications," presented at the MRS Fall Meeting, Boston 1988.

  30. "Photoluminescence Evaluation of Si Ion Implant Activation in InP," presented at the Electronic Materials Conference held in Boulder, June 1988.

  31. "Interface Spectroscopic Studies of Sulfurized InP," presented at the Electronic Materials Conference held in Boulder, June 1988.

  32. "The Effect of Phosphorous and Sulfur Treatment on the Surface Properties of InP," presented at the 15th Conference on the Physics and Chemistry of Semiconductor Interfaces, held at Asilomar, CA, Feb. 1988.

  33. "Electrical Properties of Anodic and Deposited Dielectric MIS Structures on InSb," presented at the 15th Conference on the Physics and Chemistry of Semiconductor Interfaces, held at Asilomar, CA, Feb. 1988.

  34. "Dielectrics for Optoelectronic Device Applications on the III-V Compounds," presented at the International Symposium on the Technologies for Optoelectronics, Cannes, November 1987, (invited plenary paper).

  35. "Insulating Layers on InP," presented at the Integrated Optical and Opto-Electronic Logic Basic Research Conference held at ARDEC, NJ, December 1986 (invited).

  36. "Indium Phosphide," presented at the American Defense Preparedness Association Meeting on Electronic Materials held in Los Angeles, October 1986 (invited).

  37. "The Growth and In-Situ Characterization of Chemical Vapor Deposited Dielectrics on InP," with R. Iyer and R. R. Chang, presented at the NATO Workshop on InP held at Cape Cod, September 1986.

  38. "Characterization of the Dielectric-Semiconductor Interface Using In-Situ Photoluminescence," with R. R. Chang and R. Iyer, presented at the EMC, Amherst, MA, June 1986.

  39. "The Preparation and Control of Low Temperature Dielectrics on Si and InP," with R. Iyer and R. R. Chang, presented at the EMC, Amherst, MA, June 1986.

  40. "Insulated Gate Device Development on the III-V Compounds," Presented at the Electrochemical Society Meeting, held in Las Vegas, Nevada, October 1985 (Invited).

  41. "Dielectric Layers for Device Applications on the III-V Compounds - An Assessment," presented at INFOS '85, Toulouse, April 1985. (invited).

  42. "III-V Compounds for High Speed Electronics," presented at the annual meeting of the Rocky Mountain Chapter of the AVS, Denver, May 1984. (invited).

  43. "High Mobility Insulated Gate Transistors on InP," with M. J. Taylor and A. K. Nedoluha, presented at the 11th International Conference on the Physics and Chemistry of Semiconductor Interfaces, held at Pinehurst, NC, Feb. 1984.

  44. "Interfacial Constraints on Device Performance," with M. J. Taylor and A. K. Nedoluha, presented at the 11th International Conference on the Physics and Chemistry of Semiconductor Interfaces, held at Pinehurst, NC, Feb. 1984.

  45. "Layer Generation for Devices and Integrated Circuits," presented at the 6th SPIE Meeting on Optics and Electro-Optics, Los Angeles, 1983.

  46. "Interfacial Trapping and MIS Device Stability on InP," presented at the International Conference on Solid State Devices held in Tokyo, August, 1982.

  47. "A Surface Channel Charge Coupled Device on InP," presented at the GaAs IC Symposium held in San Diego, Oct. 1981.

  48. "A Microwave MIS FET Technology on InP," presented at the International Symposium on GaAs and Related Compounds held in Vienna, September 1980.

  49. "Inversion-Mode (Normally-Off) MIS FETs on InP," presented at WOCSEMMAD `79 held in Atlanta, February 1979.

  50. "The Bulk and Interfacial Characteristics of MIS Structures on GaAs and InP," presented at the Gordon Research Conference on MIS Systems held at Meriden, NH, August 1978.

  51. "Electrical Characteristics of the InP Surface," presented at the 3rd International Conference on the Physics of Compound Semiconductor Interfaces held in San Diego, February 1976.

  52. "Optical Techniques for Semiconductor Material and Circuit Inspection," presented at the 2nd Symposium on Advance Techniques for Failure Analysis held in Newport Beach, February 1976.

  53. "Photovoltaic InSb MOS Array," presented at the IRIS Meeting held at the El Toro Marine Base, March 1974.

  54. "The Thin Film Surface Photodiode," presented at the International Conference on Thin Films held in Venice, May 1972.

  55. "Plasma Generation in Thin InSb Layers," presented at the Government Microcircuit Applications Conference held at Ft. Monmouth, NJ, October 1970.